gan hemt pulsed power transistor 3.1 - 3.5 ghz, 30w peak, 500us pulse, 10% duty cycle magx - 003135 - 030l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. features ? gan depletion mode hemt microwave transistor ? common source configuration ? broadband class ab operation ? thermally enhanced cu/mo/cu package ? rohs compliant ? +50v typical operation ? mttf of 114 years (channel temperature < 200c) application ? civilian and military pulsed radar product description the magx - 003135 - 030l00 is a gold metalized matched gallium nitride (gan) on silicon carbide rf power transistor optimized for civilian and military radar pulsed applications between 3100 - 3500 mhz. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for todays demanding application needs. the magx - 003135 - 030l00 is constructed using a thermally enhanced cu/mo/cu flanged ceramic package which provides excellent thermal performance. high breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. ordering information magx - 003135 - 030l00 30w gan power transistor magx - 003135 - sb1ppr evaluation fixture typical rf performance freq. (mhz) pin (w peak) pout (w peak) gain (db) eff (%) 3100 3 40 11.2 59.3 3300 3 40 11.2 57.7 3500 3 34 10.5 51.2 typical rf performance measured in m/a - com rf test fixture. devices tested in common source class - ab configuration as follows: vdd=50v, idq=130ma (pulsed), f=3.1 - 3.5ghz, pulse=500us, duty=10%.
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 30w peak, 500us pulse, 10% duty cycle magx - 003135 - 030l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. absolute maximum ratings table (1, 2, 3) supply voltage (vdd) +65v supply voltage (vgg) - 8 to 0v supply current (id1) 3000 ma input power (pin) +30 dbm absolute max. junction/channel temp 200 oc mttf (t j <200c) 114 years continuous power dissipation (pdiss) at 85 oc 27 w pulsed power dissipation (pavg) at 85 oc 65 w thermal resistance, (tchannel = 200 oc) pulsed 500us, 10% duty cycle 1.8 oc/w operating temp - 40 to +95c storage temp - 65 to +150c mounting temperature see solder reflow profile esd min. - machine model (mm) 50 v esd min. - human body model (hbm) >250 v msl level msl1 (1) operation of this device above any one of these parameters may cause permanent damage. (2) channel temperature directly affects a device's mttf. channel temperature should be kept as low as possible to maximize lifetime. (3) for saturated performance it recommended that the sum of (3*vdd + abs(vgg)) <175 parameter test conditions symbol min typ max units dc characteristics drain - source leakage current v gs = - 8v, v ds = 175v i ds - - 2.5 ma gate threshold voltage v ds = 5v, i d = 6ma v gs (th) - 5 - 3 - 2 v forward transconductance v ds = 5v, i d = 1.5ma g m 1.0 - - s dynamic characteristics input capacitance v ds = 0v, v gs = - 8v, f = 1mhz c iss - 13.2 - pf output capacitance v ds = 50v, v gs = - 8v, f = 1mhz c oss - 5.6 - pf reverse transfer capacitance v ds = 50v, v gs = - 8v, f = 1mhz c rss - 0.5 - pf
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 30w peak, 500us pulse, 10% duty cycle magx - 003135 - 030l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. electrical specifications: t c = 25 5c ( room ambient ) test fixture impedance parameter test conditions symbol min typ max units rf functional tests vdd=50v, idq=130ma (pulsed), f=3.1 - 3.5ghz, pulse=500us, duty=10%. output power pin = 3w peak p out 30 3 40 4 - w peak w ave power gain pout = 30w peak g p 10.0 11.0 - db drain efficiency pin = 3w peak d 50 55 - % load mismatch stability pin = 3w peak vswr - s 5:1 - - load mismatch tolerance pin = 3w peak vswr - t 10:1 - - f (mhz) z if ( ) z of ( ) 3100 7.6 - j12.5 5.2 - j0.2 3300 7.5 - j11.4 6.0 + j0.2 3500 7.2 - j10.2 6.7 + j0.1 i n p u t n e t w o r k z i f o u t p u t n e t w o r k z o f
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 30w peak, 500us pulse, 10% duty cycle magx - 003135 - 030l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. gain vs. frequency 50v drain bias, idq=0.13a gain vs. frequency 65v drain bias, idq=0.13a
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 30w peak, 500us pulse, 10% duty cycle magx - 003135 - 030l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 5 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed.
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 30w peak, 500us pulse, 10% duty cycle magx - 003135 - 030l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 6 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed.
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 30w peak, 500us pulse, 10% duty cycle magx - 003135 - 030l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 7 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. test test fixture assembly note: a .dwg circuit drawing is available upon request
gan hemt pulsed power transistor 3.1 - 3.5 ghz, 30w peak, 500us pulse, 10% duty cycle magx - 003135 - 030l00 production v1 23 aug 11 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 8 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. outline drawings turning the device on 1. set v gs to the pinch - off (v p ), typically - 5v 2. turn on v ds to nominal voltage (50v) 3. increase v gs until the i ds current is reached 4. apply rf power to desired level turning the device off 1. turn the rf power off 2. decrease v gs down to v p 3. decrease v ds down to 0v 4. turn off v gs correct device sequencing
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